BC846S Datasheet & Equivalents

NPN SOT-363 General Purpose TECH PUBLIC
VCEO
65V
Ic Max
100mA
Pd Max
300mW
hFE Gain
250

Quick Reference

The BC846S is a NPN bipolar junction transistor in a SOT-363 package, manufactured by TECH PUBLIC. It supports a breakdown voltage of 65V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTECH PUBLICOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)65VMax breakdown voltage
Collector Current (Ic)100mAMax current handling
Power Dissipation (Pd)300mWMax thermal limit
DC Current Gain (hFE)250Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BC846BS NPN SOT-363 65V 100mA 200 200mW
FUXINSEMI ๐Ÿ“„ PDF
AD-BC846S NPN SOT-363 65V 100mA 450 200mW
MMDT5551 NPN SOT-363 160V 200mA 250 200mW
JTDMMDT5551 NPN SOT-363 160V 200mA 300 200mW
MMDT5551-JSM NPN SOT-363 160V 200mA 300 200mW
MMDT5551DW NPN SOT-363 160V 200mA 300 200mW
MMDT5551 NPN SOT-363 160V 200mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT5551 NPN SOT-363 160V 200mA 300 200mW
MMDT5551 NPN SOT-363 160V 200mA 300 200mW
HMMDT55517F NPN SOT-363 160V 200mA 100 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT5551(RANGE:100-300) NPN SOT-363 160V 200mA 80 200mW
MMDT5551 NPN SOT-363 160V 200mA 80 200mW
TECH PUBLIC ๐Ÿ“„ PDF