MMDT5551 Datasheet & Equivalents
NPN
SOT-363
General Purpose
R+O
VCEO
160V
Ic Max
200mA
Pd Max
200mW
hFE Gain
300
Quick Reference
The MMDT5551 is a NPN bipolar junction transistor in a SOT-363 package, manufactured by R+O. It supports a breakdown voltage of 160V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | R+O | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 160V | Max breakdown voltage |
| Collector Current (Ic) | 200mA | Max current handling |
| Power Dissipation (Pd) | 200mW | Max thermal limit |
| DC Current Gain (hFE) | 300 | Base signal amplification ratio |
| Transition Frequency (fT) | 300MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 200mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 50nA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| JTDMMDT5551 | NPN | SOT-363 | 160V | 200mA | 300 | 200mW | JTD 📄 PDF |
| MMDT5551-JSM | NPN | SOT-363 | 160V | 200mA | 300 | 200mW | JSMSEMI 📄 PDF |
| MMDT5551DW | NPN | SOT-363 | 160V | 200mA | 300 | 200mW | CBI 📄 PDF |
| HMMDT55517F | NPN | SOT-363 | 160V | 200mA | 100 | 200mW | HXY MOSFET 📄 PDF |
| MMDT5551(RANGE:100-300) | NPN | SOT-363 | 160V | 200mA | 80 | 200mW | JSCJ 📄 PDF |