MMDT5551(RANGE:100-300) Datasheet & Equivalents

NPN SOT-363 General Purpose JSCJ
VCEO
160V
Ic Max
200mA
Pd Max
200mW
hFE Gain
80

Quick Reference

The MMDT5551(RANGE:100-300) is a NPN bipolar junction transistor in a SOT-363 package, manufactured by JSCJ. It supports a breakdown voltage of 160V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)160VMax breakdown voltage
Collector Current (Ic)200mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)80Base signal amplification ratio
Transition Frequency (fT)300MHzMax operating frequency
Saturation Voltage (VCEsat)200mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current50nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMDT5551 NPN SOT-363 160V 200mA 80 200mW
TECH PUBLIC ๐Ÿ“„ PDF
HMMDT55517F NPN SOT-363 160V 200mA 100 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT5551 NPN SOT-363 160V 200mA 250 200mW
JTDMMDT5551 NPN SOT-363 160V 200mA 300 200mW
MMDT5551-JSM NPN SOT-363 160V 200mA 300 200mW
MMDT5551DW NPN SOT-363 160V 200mA 300 200mW
MMDT5551 NPN SOT-363 160V 200mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT5551 NPN SOT-363 160V 200mA 300 200mW
MMDT5551 NPN SOT-363 160V 200mA 300 200mW