BC846BS Datasheet & Equivalents

NPN SOT-363 General Purpose FUXINSEMI
VCEO
65V
Ic Max
100mA
Pd Max
200mW
hFE Gain
200

Quick Reference

The BC846BS is a NPN bipolar junction transistor in a SOT-363 package, manufactured by FUXINSEMI. It supports a breakdown voltage of 65V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerFUXINSEMIOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)65VMax breakdown voltage
Collector Current (Ic)100mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)200Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)300mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current15nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BC846S NPN SOT-363 65V 100mA 250 300mW
TECH PUBLIC ๐Ÿ“„ PDF
AD-BC846S NPN SOT-363 65V 100mA 450 200mW
MMDT5551 NPN SOT-363 160V 200mA 250 200mW
HMMDT55517F NPN SOT-363 160V 200mA 100 200mW
HXY MOSFET ๐Ÿ“„ PDF
JTDMMDT5551 NPN SOT-363 160V 200mA 300 200mW
MMDT5551-JSM NPN SOT-363 160V 200mA 300 200mW
MMDT5551DW NPN SOT-363 160V 200mA 300 200mW
MMDT5551 NPN SOT-363 160V 200mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT5551 NPN SOT-363 160V 200mA 300 200mW
MMDT5551 NPN SOT-363 160V 200mA 300 200mW
MMDT5551(RANGE:100-300) NPN SOT-363 160V 200mA 80 200mW
MMDT5551 NPN SOT-363 160V 200mA 80 200mW
TECH PUBLIC ๐Ÿ“„ PDF