AP6679GH-HF MOSFET Datasheet & Specifications

P-Channel TO-252 High-Current APEC
Vds Max
30V
Id Max
75A
Rds(on)
15mΩ@4.5V
Vgs(th)
-

Quick Reference

The AP6679GH-HF is an P-Channel MOSFET in a TO-252 package, manufactured by APEC. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 75A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerAPECOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)75AMax current handling
Power Dissipation (Pd)89WMax thermal limit
On-Resistance (Rds(on))15mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))-Voltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)4.59nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

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CMD80P06A P-Channel TO-252 60V 80A 15mΩ@10V 3V
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