ZXTN25012EFLTA Transistor Datasheet & Specifications

NPN SOT-23 General Purpose DIODES
VCEO
12V
Ic Max
2A
Pd Max
350mW
hFE Gain
500

Quick Reference

The ZXTN25012EFLTA is a NPN bipolar transistor in a SOT-23 package by DIODES. This datasheet provides complete specifications including 12V breakdown voltage and 2A continuous collector current. Download the ZXTN25012EFLTA datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO12VBreakdown voltage
Ic2ACollector current
Pd350mWPower dissipation
DC Current Gain500hFE / Beta
Frequency260MHzTransition speed (fT)
VCEsat65mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
PBSS4350T,215 NPN SOT-23 50V 2A 300mW
NSS40201LT1G NPN SOT-23 40V 2A 460mW
NSS20201LT1G NPN SOT-23 20V 2A 540mW
PBSS4230T,215 NPN SOT-23 30V 2A 480mW
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
ZXTN25015DFHTA NPN SOT-23 15V 5A 1.25W
NSS1C201LT1G NPN SOT-23 100V 2A 710mW
FMMT619TA NPN SOT-23 50V 2A 625mW
DSS4240T-7 NPN SOT-23 40V 2A 730mW