NSS20201LT1G Transistor Datasheet & Specifications

NPN SOT-23 General Purpose onsemi
VCEO
20V
Ic Max
2A
Pd Max
540mW
hFE Gain
200

Quick Reference

The NSS20201LT1G is a NPN bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 20V breakdown voltage and 2A continuous collector current. Download the NSS20201LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO20VBreakdown voltage
Ic2ACollector current
Pd540mWPower dissipation
DC Current Gain200hFE / Beta
Frequency150MHzTransition speed (fT)
VCEsat72mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
PBSS4350T,215 NPN SOT-23 50V 2A 300mW
NSS40201LT1G NPN SOT-23 40V 2A 460mW
PBSS4230T,215 NPN SOT-23 30V 2A 480mW
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
NSS1C201LT1G NPN SOT-23 100V 2A 710mW
FMMT619TA NPN SOT-23 50V 2A 625mW
DSS4240T-7 NPN SOT-23 40V 2A 730mW
ZXTN2018FTA NPN SOT-23 60V 5A 1.56W
ZXTN25050DFHTA NPN SOT-23 50V 4A 1.25W