TPBT60N5Y3 Transistor Datasheet & Specifications

NPN SOT-223 General Purpose TECH PUBLIC
VCEO
60V
Ic Max
5.2A
Pd Max
700mW
hFE Gain
-

Quick Reference

The TPBT60N5Y3 is a NPN bipolar transistor in a SOT-223 package by TECH PUBLIC. This datasheet provides complete specifications including 60V breakdown voltage and 5.2A continuous collector current. Download the TPBT60N5Y3 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTECH PUBLICOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic5.2ACollector current
Pd700mWPower dissipation
DC Current Gain-hFE / Beta
Frequency30MHzTransition speed (fT)
VCEsat300@500mA,2VSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZX5T851GTA NPN SOT-223 60V 6A 1.6W
FZT853TA NPN SOT-223 100V 6A 3W
LBTN560Z4TZHG NPN SOT-223 60V 5.2A 1W
PBSS304NZ NPN SOT-223 60V 5.2A 700mW
ZXTN2010GTA NPN SOT-223 60V 6A 3W
FZT851TA NPN SOT-223 60V 6A 3W
ZXTN19060CGTA NPN SOT-223 60V 7A 3W
NSS60601MZ4T1G NPN SOT-223 60V 6A 2W