NSS60601MZ4T1G Transistor Datasheet & Specifications

NPN SOT-223 General Purpose onsemi
VCEO
60V
Ic Max
6A
Pd Max
2W
hFE Gain
150

Quick Reference

The NSS60601MZ4T1G is a NPN bipolar transistor in a SOT-223 package by onsemi. This datasheet provides complete specifications including 60V breakdown voltage and 6A continuous collector current. Download the NSS60601MZ4T1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic6ACollector current
Pd2WPower dissipation
DC Current Gain150hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZX5T851GTA NPN SOT-223 60V 6A 1.6W
FZT853TA NPN SOT-223 100V 6A 3W
ZXTN2010GTA NPN SOT-223 60V 6A 3W
FZT851TA NPN SOT-223 60V 6A 3W
ZXTN19060CGTA NPN SOT-223 60V 7A 3W