TIP102G Transistor Datasheet & Specifications

NPN TO-220 General Purpose onsemi
VCEO
100V
Ic Max
8A
Pd Max
2W
hFE Gain
1000

Quick Reference

The TIP102G is a NPN bipolar transistor in a TO-220 package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the TIP102G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic8ACollector current
Pd2WPower dissipation
DC Current Gain1000hFE / Beta
Frequency-Transition speed (fT)
VCEsat2.5VSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current50uALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒ@(Tj)Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJE13007G NPN TO-220 400V 8A 80W
MJE13009-2 NPN TO-220 400V 12A 100W
KSE13007H2SMTU-HXY NPN TO-220 400V 8A 80W
MJE15030G NPN TO-220 150V 8A 50W
MJE15032G NPN TO-220 250V 8A 50W
TIP41C NPN TO-220 100V 9A 65W
MJE15030 NPN TO-220 150V 8A 50W
MJE13006-HXY NPN TO-220 400V 8A 80W
NTE2312-HXY NPN TO-220 400V 8A 80W
FJP13007H1TU-F080-HXY NPN TO-220 400V 8A 80W