MJE13006-HXY Transistor Datasheet & Specifications

NPN TO-220 High Power HXY MOSFET
VCEO
400V
Ic Max
8A
Pd Max
80W
hFE Gain
10

Quick Reference

The MJE13006-HXY is a NPN bipolar transistor in a TO-220 package by HXY MOSFET. This datasheet provides complete specifications including 400V breakdown voltage and 8A continuous collector current. Download the MJE13006-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO400VBreakdown voltage
Ic8ACollector current
Pd80WPower dissipation
DC Current Gain10hFE / Beta
Frequency4MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJE13007G NPN TO-220 400V 8A 80W
MJE13009-2 NPN TO-220 400V 12A 100W
KSE13007H2SMTU-HXY NPN TO-220 400V 8A 80W
NTE2312-HXY NPN TO-220 400V 8A 80W
FJP13007H1TU-F080-HXY NPN TO-220 400V 8A 80W
ST13009 NPN TO-220 700V 12A 100W