MJE13007G Transistor Datasheet & Specifications

NPN TO-220 High Power onsemi
VCEO
400V
Ic Max
8A
Pd Max
80W
hFE Gain
5

Quick Reference

The MJE13007G is a NPN bipolar transistor in a TO-220 package by onsemi. This datasheet provides complete specifications including 400V breakdown voltage and 8A continuous collector current. Download the MJE13007G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO400VBreakdown voltage
Ic8ACollector current
Pd80WPower dissipation
DC Current Gain5hFE / Beta
Frequency14MHzTransition speed (fT)
VCEsat3VSaturation voltage
Vebo9VEmitter-Base voltage
Cutoff Current100uALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJE13009-2 NPN TO-220 400V 12A 100W
KSE13007H2SMTU-HXY NPN TO-220 400V 8A 80W
MJE13006-HXY NPN TO-220 400V 8A 80W
NTE2312-HXY NPN TO-220 400V 8A 80W
FJP13007H1TU-F080-HXY NPN TO-220 400V 8A 80W
ST13009 NPN TO-220 700V 12A 100W