MJE15030G Transistor Datasheet & Specifications

NPN TO-220 High Power onsemi
VCEO
150V
Ic Max
8A
Pd Max
50W
hFE Gain
40

Quick Reference

The MJE15030G is a NPN bipolar transistor in a TO-220 package by onsemi. This datasheet provides complete specifications including 150V breakdown voltage and 8A continuous collector current. Download the MJE15030G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO150VBreakdown voltage
Ic8ACollector current
Pd50WPower dissipation
DC Current Gain40hFE / Beta
Frequency30MHzTransition speed (fT)
VCEsat3VSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current10uALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJE13007G NPN TO-220 400V 8A 80W
MJE13009-2 NPN TO-220 400V 12A 100W
KSE13007H2SMTU-HXY NPN TO-220 400V 8A 80W
MJE15032G NPN TO-220 250V 8A 50W
MJE15030 NPN TO-220 150V 8A 50W
MJE13006-HXY NPN TO-220 400V 8A 80W
NTE2312-HXY NPN TO-220 400V 8A 80W
FJP13007H1TU-F080-HXY NPN TO-220 400V 8A 80W
MJE15032G NPN TO-220 250V 8A 50W
ST13009 NPN TO-220 700V 12A 100W