MJE15032G Transistor Datasheet & Specifications
NPN
TO-220
High Power
onsemi
VCEO
250V
Ic Max
8A
Pd Max
50W
hFE Gain
70
Quick Reference
The MJE15032G is a NPN bipolar transistor in a TO-220 package by onsemi. This datasheet provides complete specifications including 250V breakdown voltage and 8A continuous collector current. Download the MJE15032G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 250V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 50W | Power dissipation |
| DC Current Gain | 70 | hFE / Beta |
| Frequency | 30MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJE13007G | NPN | TO-220 | 400V | 8A | 80W |
| MJE13009-2 | NPN | TO-220 | 400V | 12A | 100W |
| KSE13007H2SMTU-HXY | NPN | TO-220 | 400V | 8A | 80W |
| MJE15032G | NPN | TO-220 | 250V | 8A | 50W |
| MJE13006-HXY | NPN | TO-220 | 400V | 8A | 80W |
| NTE2312-HXY | NPN | TO-220 | 400V | 8A | 80W |
| FJP13007H1TU-F080-HXY | NPN | TO-220 | 400V | 8A | 80W |
| ST13009 | NPN | TO-220 | 700V | 12A | 100W |