TBC847B,LM Transistor Datasheet & Specifications
NPN
SOT-23
General Purpose
TOSHIBA
VCEO
50V
Ic Max
150mA
Pd Max
320mW
hFE Gain
200
Quick Reference
The TBC847B,LM is a NPN bipolar transistor in a SOT-23 package by TOSHIBA. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the TBC847B,LM datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 150mA | Collector current |
| Pd | 320mW | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 170mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 30nA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMBTA05(RANGE:100-400) | NPN | SOT-23 | 60V | 500mA | 300mW |
| ZXTN2020FTA | NPN | SOT-23 | 100V | 4A | 1.2W |
| DN350T05-7 | NPN | SOT-23 | 350V | 500mA | 300mW |
| DNBT8105-7 | NPN | SOT-23 | 60V | 1A | 600mW |
| FMMT458TA | NPN | SOT-23 | 400V | 225mA | 500mW |
| MMBTA42 | NPN | SOT-23 | 200V | 500mA | 350mW |
| FMMT415TD | NPN | SOT-23 | 100V | 500mA | 500mW |
| FMMT493ATA | NPN | SOT-23 | 60V | 1A | 500mW |
| MMBTA42Q-7-F | NPN | SOT-23 | 300V | 500mA | 300mW |
| MMBT5551 | NPN | SOT-23 | 160V | 600mA | 250mW |