STD1802T4 Transistor Datasheet & Specifications

NPN TO-252(DPAK) High Power ST
VCEO
60V
Ic Max
3A
Pd Max
15W
hFE Gain
200

Quick Reference

The STD1802T4 is a NPN bipolar transistor in a TO-252(DPAK) package by ST. This datasheet provides complete specifications including 60V breakdown voltage and 3A continuous collector current. Download the STD1802T4 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic3ACollector current
Pd15WPower dissipation
DC Current Gain200hFE / Beta
Frequency150MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
NSS1C301ET4G NPN TO-252(DPAK) 100V 3A 2.1W
MJD44H11T4G NPN TO-252(DPAK) 80V 8A 20W
MJD31CG NPN TO-252(DPAK) 100V 3A 15W
MJD31CRLG NPN TO-252(DPAK) 100V 3A 15W
NJVMJD31CT4G NPN TO-252(DPAK) 100V 3A 15W
MJD31CT4G NPN TO-252(DPAK) 100V 3A 15W
MJD41CQ-13 NPN TO-252(DPAK) 100V 6A 2.7W
MJD44H11 NPN TO-252(DPAK) 80V 8A 20W
MJD122T4G NPN TO-252(DPAK) 100V 8A 1.75W
MJD31CUQ-13 NPN TO-252(DPAK) 100V 3A 1.6W