MJD41CQ-13 Transistor Datasheet & Specifications
NPN
TO-252(DPAK)
High Power
DIODES
VCEO
100V
Ic Max
6A
Pd Max
2.7W
hFE Gain
-
Quick Reference
The MJD41CQ-13 is a NPN bipolar transistor in a TO-252(DPAK) package by DIODES. This datasheet provides complete specifications including 100V breakdown voltage and 6A continuous collector current. Download the MJD41CQ-13 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TO-252(DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 6A | Collector current |
| Pd | 2.7W | Power dissipation |
| DC Current Gain | - | hFE / Beta |
| Frequency | 3MHz | Transition speed (fT) |
| VCEsat | 1.5V | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD122T4G | NPN | TO-252(DPAK) | 100V | 8A | 1.75W |