MJD122T4G Transistor Datasheet & Specifications
NPN
TO-252(DPAK)
General Purpose
onsemi
VCEO
100V
Ic Max
8A
Pd Max
1.75W
hFE Gain
1000
Quick Reference
The MJD122T4G is a NPN bipolar transistor in a TO-252(DPAK) package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the MJD122T4G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252(DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 1.75W | Power dissipation |
| DC Current Gain | 1000 | hFE / Beta |
| Frequency | 4MHz | Transition speed (fT) |
| VCEsat | 4V | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | -65℃~+150℃@(Tj) | Operating temp |