MJD31CUQ-13 Transistor Datasheet & Specifications

NPN TO-252(DPAK) General Purpose DIODES
VCEO
100V
Ic Max
3A
Pd Max
1.6W
hFE Gain
25

Quick Reference

The MJD31CUQ-13 is a NPN bipolar transistor in a TO-252(DPAK) package by DIODES. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the MJD31CUQ-13 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic3ACollector current
Pd1.6WPower dissipation
DC Current Gain25hFE / Beta
Frequency3MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
NSS1C301ET4G NPN TO-252(DPAK) 100V 3A 2.1W
MJD31CG NPN TO-252(DPAK) 100V 3A 15W
MJD31CRLG NPN TO-252(DPAK) 100V 3A 15W
NJVMJD31CT4G NPN TO-252(DPAK) 100V 3A 15W
MJD31CT4G NPN TO-252(DPAK) 100V 3A 15W
MJD41CQ-13 NPN TO-252(DPAK) 100V 6A 2.7W
MJD122T4G NPN TO-252(DPAK) 100V 8A 1.75W
2SD1816S-TL-E NPN TO-252(DPAK) 100V 4A 20W