2SD1816S-TL-E Transistor Datasheet & Specifications
NPN
TO-252(DPAK)
High Power
onsemi
VCEO
100V
Ic Max
4A
Pd Max
20W
hFE Gain
140
Quick Reference
The 2SD1816S-TL-E is a NPN bipolar transistor in a TO-252(DPAK) package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 4A continuous collector current. Download the 2SD1816S-TL-E datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252(DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 4A | Collector current |
| Pd | 20W | Power dissipation |
| DC Current Gain | 140 | hFE / Beta |
| Frequency | 180MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD41CQ-13 | NPN | TO-252(DPAK) | 100V | 6A | 2.7W |
| MJD122T4G | NPN | TO-252(DPAK) | 100V | 8A | 1.75W |