SS8050 Transistor Datasheet & Specifications

NPN SOT-89 General Purpose MSKSEMI
VCEO
25V
Ic Max
1.5A
Pd Max
500mW
hFE Gain
200

Quick Reference

The SS8050 is a NPN bipolar transistor in a SOT-89 package by MSKSEMI. This datasheet provides complete specifications including 25V breakdown voltage and 1.5A continuous collector current. Download the SS8050 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO25VBreakdown voltage
Ic1.5ACollector current
Pd500mWPower dissipation
DC Current Gain200hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2010ZTA NPN SOT-89 60V 5A 2.1W
ZXTN19055DZTA NPN SOT-89 55V 6A 2.1W
FCX690BTA NPN SOT-89 45V 2A 2W
2SC5824T100R NPN SOT-89 60V 3A 2W
2STF1360 NPN SOT-89 60V 3A 1.4W
PBSS4330X,115 NPN SOT-89 30V 3A 1.6W
PBSS4350X,115 NPN SOT-89 50V 3A 1.6W
ZXTN2011ZTA NPN SOT-89 100V 4.5A 2.1W
2SC5566-TD-E NPN SOT-89 50V 4A 3.5W
2SCR553PT100 NPN SOT-89 50V 2A 2W