ZXTN19055DZTA Transistor Datasheet & Specifications
NPN
SOT-89
High Power
DIODES
VCEO
55V
Ic Max
6A
Pd Max
2.1W
hFE Gain
250
Quick Reference
The ZXTN19055DZTA is a NPN bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 55V breakdown voltage and 6A continuous collector current. Download the ZXTN19055DZTA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 55V | Breakdown voltage |
| Ic | 6A | Collector current |
| Pd | 2.1W | Power dissipation |
| DC Current Gain | 250 | hFE / Beta |
| Frequency | 200MHz | Transition speed (fT) |
| VCEsat | 60mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |