PZTA56-HXY Transistor Datasheet & Specifications

PNP SOT-223 General Purpose HXY MOSFET
VCEO
80V
Ic Max
500mA
Pd Max
1.5W
hFE Gain
100

Quick Reference

The PZTA56-HXY is a PNP bipolar transistor in a SOT-223 package by HXY MOSFET. This datasheet provides complete specifications including 80V breakdown voltage and 500mA continuous collector current. Download the PZTA56-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic500mACollector current
Pd1.5WPower dissipation
DC Current Gain100hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FZT955TA PNP SOT-223 140V 4A 3W
ZXTP2014GTA PNP SOT-223 140V 4A 3W
BCP53T1G PNP SOT-223 80V 1.5A 1.5W
FZT956TA PNP SOT-223 200V 2A 3W
BCP53-16 PNP SOT-223 80V 1A 1.5W
SBCP53-10T1G PNP SOT-223 80V 1.5A 1.5W
ZX5T955GTA PNP SOT-223 140V 4A 3W
BCP53-16 PNP SOT-223 80V 1A 1.5W
BCP53-10T1G PNP SOT-223 80V 1.5A 1.5W
CZT5401 PNP SOT-223 150V 600mA 1W