FZT956TA Transistor Datasheet & Specifications
PNP
SOT-223
High Power
DIODES
VCEO
200V
Ic Max
2A
Pd Max
3W
hFE Gain
100
Quick Reference
The FZT956TA is a PNP bipolar transistor in a SOT-223 package by DIODES. This datasheet provides complete specifications including 200V breakdown voltage and 2A continuous collector current. Download the FZT956TA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 200V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 3W | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 110MHz | Transition speed (fT) |
| VCEsat | 165mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |