BCP53T1G Transistor Datasheet & Specifications

PNP SOT-223 General Purpose onsemi
VCEO
80V
Ic Max
1.5A
Pd Max
1.5W
hFE Gain
25

Quick Reference

The BCP53T1G is a PNP bipolar transistor in a SOT-223 package by onsemi. This datasheet provides complete specifications including 80V breakdown voltage and 1.5A continuous collector current. Download the BCP53T1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic1.5ACollector current
Pd1.5WPower dissipation
DC Current Gain25hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FZT955TA PNP SOT-223 140V 4A 3W
ZXTP2014GTA PNP SOT-223 140V 4A 3W
FZT956TA PNP SOT-223 200V 2A 3W
SBCP53-10T1G PNP SOT-223 80V 1.5A 1.5W
ZX5T955GTA PNP SOT-223 140V 4A 3W
BCP53-10T1G PNP SOT-223 80V 1.5A 1.5W
FZT954 PNP SOT-223 100V 5A 800mW
BCP53-16T1G PNP SOT-223 80V 1.5A 1.5W
FZT955-MS PNP SOT-223 140V 4A 3W
TIP32CQ PNP SOT-223 100V 3A 1W