BCP53-10T1G Transistor Datasheet & Specifications

PNP SOT-223 General Purpose onsemi
VCEO
80V
Ic Max
1.5A
Pd Max
1.5W
hFE Gain
63

Quick Reference

The BCP53-10T1G is a PNP bipolar transistor in a SOT-223 package by onsemi. This datasheet provides complete specifications including 80V breakdown voltage and 1.5A continuous collector current. Download the BCP53-10T1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic1.5ACollector current
Pd1.5WPower dissipation
DC Current Gain63hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FZT955TA PNP SOT-223 140V 4A 3W
ZXTP2014GTA PNP SOT-223 140V 4A 3W
BCP53T1G PNP SOT-223 80V 1.5A 1.5W
FZT956TA PNP SOT-223 200V 2A 3W
SBCP53-10T1G PNP SOT-223 80V 1.5A 1.5W
ZX5T955GTA PNP SOT-223 140V 4A 3W
FZT954 PNP SOT-223 100V 5A 800mW
BCP53-16T1G PNP SOT-223 80V 1.5A 1.5W
FZT955-MS PNP SOT-223 140V 4A 3W
TIP32CQ PNP SOT-223 100V 3A 1W