PZT5551G-B-AA3-R Transistor Datasheet & Specifications

NPN SOT-223 General Purpose UTC
VCEO
160V
Ic Max
690mA
Pd Max
2W
hFE Gain
400

Quick Reference

The PZT5551G-B-AA3-R is a NPN bipolar transistor in a SOT-223 package by UTC. This datasheet provides complete specifications including 160V breakdown voltage and 690mA continuous collector current. Download the PZT5551G-B-AA3-R datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO160VBreakdown voltage
Ic690mACollector current
Pd2WPower dissipation
DC Current Gain400hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FZT857TA NPN SOT-223 300V 3.5A 3W
DXT13003DG-13 NPN SOT-223 450V 1.5A 3W
STN2580 NPN SOT-223 400V 1A 1.6W
STN83003 NPN SOT-223 400V 1.5A 1.6W
5302DG-AA3-R NPN SOT-223 400V 2A 1W