PMBT5551,215 Transistor Datasheet & Specifications

NPN SOT-23 General Purpose Nexperia
VCEO
160V
Ic Max
300mA
Pd Max
250mW
hFE Gain
80

Quick Reference

The PMBT5551,215 is a NPN bipolar transistor in a SOT-23 package by Nexperia. This datasheet provides complete specifications including 160V breakdown voltage and 300mA continuous collector current. Download the PMBT5551,215 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO160VBreakdown voltage
Ic300mACollector current
Pd250mWPower dissipation
DC Current Gain80hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
DN350T05-7 NPN SOT-23 350V 500mA 300mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT5551 NPN SOT-23 160V 600mA 300mW
MMBTA42 NPN SOT-23 300V 300mA 350mW
SMMBTA42LT1G NPN SOT-23 300V 500mA 225mW
SMMBTA42LT3G NPN SOT-23 300V 500mA 225mW
MMBTA42-7-F NPN SOT-23 300V 500mA 300mW
S-MMBTA42LT1G NPN SOT-23 300V 500mA 350mW