PBSS8110T,215 Transistor Datasheet & Specifications

NPN SOT-23 General Purpose Nexperia
VCEO
100V
Ic Max
1A
Pd Max
480mW
hFE Gain
150

Quick Reference

The PBSS8110T,215 is a NPN bipolar transistor in a SOT-23 package by Nexperia. This datasheet provides complete specifications including 100V breakdown voltage and 1A continuous collector current. Download the PBSS8110T,215 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic1ACollector current
Pd480mWPower dissipation
DC Current Gain150hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
NSS1C201LT1G NPN SOT-23 100V 2A 710mW
FMMT493TA NPN SOT-23 100V 1A 500mW
FMMT493 NPN SOT-23 100V 1A 500mW
FMMT495TA NPN SOT-23 150V 1A 500mW
FMMT624TA NPN SOT-23 125V 1A 625mW
FMMT493 NPN SOT-23 100V 1A 500mW
CMPT8099-HXY NPN SOT-23 100V 1A 250mW
FMMT411TA-HXY NPN SOT-23 100V 1A 250mW