FMMT411TA-HXY Transistor Datasheet & Specifications

NPN SOT-23 General Purpose HXY MOSFET
VCEO
100V
Ic Max
1A
Pd Max
250mW
hFE Gain
300

Quick Reference

The FMMT411TA-HXY is a NPN bipolar transistor in a SOT-23 package by HXY MOSFET. This datasheet provides complete specifications including 100V breakdown voltage and 1A continuous collector current. Download the FMMT411TA-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic1ACollector current
Pd250mWPower dissipation
DC Current Gain300hFE / Beta
Frequency150MHzTransition speed (fT)
VCEsat600mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
NSS1C201LT1G NPN SOT-23 100V 2A 710mW
FMMT493TA NPN SOT-23 100V 1A 500mW
FMMT493 NPN SOT-23 100V 1A 500mW
FMMT495TA NPN SOT-23 150V 1A 500mW
FMMT624TA NPN SOT-23 125V 1A 625mW
FMMT493 NPN SOT-23 100V 1A 500mW
CMPT8099-HXY NPN SOT-23 100V 1A 250mW
PBSS8110T-HXY NPN SOT-23 100V 1A 250mW