PBSS4520X-HXY Transistor Datasheet & Specifications

NPN SOT-89 General Purpose HXY MOSFET
VCEO
20V
Ic Max
5A
Pd Max
500mW
hFE Gain
390

Quick Reference

The PBSS4520X-HXY is a NPN bipolar transistor in a SOT-89 package by HXY MOSFET. This datasheet provides complete specifications including 20V breakdown voltage and 5A continuous collector current. Download the PBSS4520X-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO20VBreakdown voltage
Ic5ACollector current
Pd500mWPower dissipation
DC Current Gain390hFE / Beta
Frequency150MHzTransition speed (fT)
VCEsat1VSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current500nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2010ZTA NPN SOT-89 60V 5A 2.1W
ZXTN19055DZTA NPN SOT-89 55V 6A 2.1W
2SD2098T100R-HXY NPN SOT-89 20V 5A 500mW
ZXTN19020DZTA NPN SOT-89 20V 7.5A 2.4W
2SC5569G-AB3-R NPN SOT-89 50V 7A 3.5W
2SD965 NPN SOT-89 22V 5A 750mW
PBSS304 NPN SOT-89 60V 5A 2.1W
2SC5569-TD-E NPN SOT-89 50V 7A 3.5W