2SC5569-TD-E Transistor Datasheet & Specifications
NPN
SOT-89
High Power
onsemi
VCEO
50V
Ic Max
7A
Pd Max
3.5W
hFE Gain
200
Quick Reference
The 2SC5569-TD-E is a NPN bipolar transistor in a SOT-89 package by onsemi. This datasheet provides complete specifications including 50V breakdown voltage and 7A continuous collector current. Download the 2SC5569-TD-E datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 7A | Collector current |
| Pd | 3.5W | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 330MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SC5569G-AB3-R | NPN | SOT-89 | 50V | 7A | 3.5W |