NTE194-HXY Transistor Datasheet & Specifications
NPN
TO-92
General Purpose
HXY MOSFET
VCEO
160V
Ic Max
600mA
Pd Max
625mW
hFE Gain
200
Quick Reference
The NTE194-HXY is a NPN bipolar transistor in a TO-92 package by HXY MOSFET. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the NTE194-HXY datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 625mW | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| KSP8099TF-HXY | NPN | TO-92 | 160V | 600mA | 625mW |
| NTE297-HXY | NPN | TO-92 | 160V | 600mA | 625mW |
| 3DD13002B(RANGE:25-30) | NPN | TO-92 | 400V | 800mA | 900mW |
| 2N5551 | NPN | TO-92 | 160V | 600mA | 625mW |
| 3DD13003B-TA | NPN | TO-92 | 400V | 1.5A | 900mW |
| 2N5551 | NPN | TO-92 | 160V | 600mA | 625mW |
| 2SC2383-Y | NPN | TO-92 | 160V | 1A | 700mW |
| 2N5551 | NPN | TO-92 | 160V | 600mA | 625mW |
| PHE13003A,412 | NPN | TO-92 | 400V | 1A | 2.1W |
| ZTX694B-HXY | NPN | TO-92 | 160V | 600mA | 625mW |