PHE13003A,412 Transistor Datasheet & Specifications
NPN
TO-92
High Power
WeEn
VCEO
400V
Ic Max
1A
Pd Max
2.1W
hFE Gain
7.5
Quick Reference
The PHE13003A,412 is a NPN bipolar transistor in a TO-92 package by WeEn. This datasheet provides complete specifications including 400V breakdown voltage and 1A continuous collector current. Download the PHE13003A,412 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | WeEn | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 400V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 2.1W | Power dissipation |
| DC Current Gain | 7.5 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 400mV | Saturation voltage |
| Vebo | 9V | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 3DD13003B-TA | NPN | TO-92 | 400V | 1.5A | 900mW |