3DD13002B(RANGE:25-30) Transistor Datasheet & Specifications
NPN
TO-92
General Purpose
JSCJ
VCEO
400V
Ic Max
800mA
Pd Max
900mW
hFE Gain
25
Quick Reference
The 3DD13002B(RANGE:25-30) is a NPN bipolar transistor in a TO-92 package by JSCJ. This datasheet provides complete specifications including 400V breakdown voltage and 800mA continuous collector current. Download the 3DD13002B(RANGE:25-30) datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 400V | Breakdown voltage |
| Ic | 800mA | Collector current |
| Pd | 900mW | Power dissipation |
| DC Current Gain | 25 | hFE / Beta |
| Frequency | 5MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 100uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 3DD13003B-TA | NPN | TO-92 | 400V | 1.5A | 900mW |
| PHE13003A,412 | NPN | TO-92 | 400V | 1A | 2.1W |