2N5551 Transistor Datasheet & Specifications
NPN
TO-92
General Purpose
HXY MOSFET
VCEO
160V
Ic Max
600mA
Pd Max
625mW
hFE Gain
240
Quick Reference
The 2N5551 is a NPN bipolar transistor in a TO-92 package by HXY MOSFET. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the 2N5551 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 625mW | Power dissipation |
| DC Current Gain | 240 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | 200mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| KSP8099TF-HXY | NPN | TO-92 | 160V | 600mA | 625mW |
| NTE297-HXY | NPN | TO-92 | 160V | 600mA | 625mW |
| 3DD13002B(RANGE:25-30) | NPN | TO-92 | 400V | 800mA | 900mW |
| 3DD13003B-TA | NPN | TO-92 | 400V | 1.5A | 900mW |
| 2N5551 | NPN | TO-92 | 160V | 600mA | 625mW |
| 2SC2383-Y | NPN | TO-92 | 160V | 1A | 700mW |
| 2N5551 | NPN | TO-92 | 160V | 600mA | 625mW |
| PHE13003A,412 | NPN | TO-92 | 400V | 1A | 2.1W |
| ZTX694B-HXY | NPN | TO-92 | 160V | 600mA | 625mW |
| NTE194-HXY | NPN | TO-92 | 160V | 600mA | 625mW |