NSVMMBT6429LT1G Transistor Datasheet & Specifications

NPN SOT-23 General Purpose onsemi
VCEO
45V
Ic Max
200mA
Pd Max
225mW
hFE Gain
500

Quick Reference

The NSVMMBT6429LT1G is a NPN bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 45V breakdown voltage and 200mA continuous collector current. Download the NSVMMBT6429LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO45VBreakdown voltage
Ic200mACollector current
Pd225mWPower dissipation
DC Current Gain500hFE / Beta
Frequency700MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current10nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
BC817-16LT1G NPN SOT-23 45V 500mA 225mW
BC817-40LT1G NPN SOT-23 45V 500mA 225mW
DN350T05-7 NPN SOT-23 350V 500mA 300mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
FMMT458TA NPN SOT-23 400V 225mA 500mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
FMMT415TD NPN SOT-23 100V 500mA 500mW
FMMT493ATA NPN SOT-23 60V 1A 500mW