NSS60201LT1G Transistor Datasheet & Specifications

NPN SOT-23 General Purpose onsemi
VCEO
60V
Ic Max
2A
Pd Max
540mW
hFE Gain
100

Quick Reference

The NSS60201LT1G is a NPN bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 60V breakdown voltage and 2A continuous collector current. Download the NSS60201LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic2ACollector current
Pd540mWPower dissipation
DC Current Gain100hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat75mVSaturation voltage
Vebo8VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
NSS1C201LT1G NPN SOT-23 100V 2A 710mW
ZXTN2018FTA NPN SOT-23 60V 5A 1.56W
ZXTN2018FQTA NPN SOT-23 60V 5A 1W
MMBT5550LT3G NPN SOT-23 140V 600nA 225mW
ZXTN25100BFHTA NPN SOT-23 100V 3A 1.25W