NJD2873T4G Transistor Datasheet & Specifications

NPN TO-252(DPAK) High Power onsemi
VCEO
50V
Ic Max
2A
Pd Max
15W
hFE Gain
120

Quick Reference

The NJD2873T4G is a NPN bipolar transistor in a TO-252(DPAK) package by onsemi. This datasheet provides complete specifications including 50V breakdown voltage and 2A continuous collector current. Download the NJD2873T4G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic2ACollector current
Pd15WPower dissipation
DC Current Gain120hFE / Beta
Frequency65MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-65โ„ƒ~+175โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
NSS1C301ET4G NPN TO-252(DPAK) 100V 3A 2.1W
MJD44H11T4G NPN TO-252(DPAK) 80V 8A 20W
MJD31CG NPN TO-252(DPAK) 100V 3A 15W
MJD31CRLG NPN TO-252(DPAK) 100V 3A 15W
NJVMJD31CT4G NPN TO-252(DPAK) 100V 3A 15W
MJD31CT4G NPN TO-252(DPAK) 100V 3A 15W
MJD41CQ-13 NPN TO-252(DPAK) 100V 6A 2.7W
MJD44H11 NPN TO-252(DPAK) 80V 8A 20W
STD1802T4 NPN TO-252(DPAK) 60V 3A 15W
MJD122T4G NPN TO-252(DPAK) 100V 8A 1.75W