MMBTSC3875G Transistor Datasheet & Specifications

NPN SOT-23 General Purpose PJSEMI
VCEO
50V
Ic Max
150mA
Pd Max
150mW
hFE Gain
400

Quick Reference

The MMBTSC3875G is a NPN bipolar transistor in a SOT-23 package by PJSEMI. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the MMBTSC3875G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerPJSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic150mACollector current
Pd150mWPower dissipation
DC Current Gain400hFE / Beta
Frequency80MHzTransition speed (fT)
VCEsat250mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current700nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
DN350T05-7 NPN SOT-23 350V 500mA 300mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
FMMT458TA NPN SOT-23 400V 225mA 500mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
FMMT415TD NPN SOT-23 100V 500mA 500mW
FMMT493ATA NPN SOT-23 60V 1A 500mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 250mW