MMBTA43 Transistor Datasheet & Specifications

NPN SOT-23 General Purpose Huixin
VCEO
200V
Ic Max
500mA
Pd Max
350mW
hFE Gain
40

Quick Reference

The MMBTA43 is a NPN bipolar transistor in a SOT-23 package by Huixin. This datasheet provides complete specifications including 200V breakdown voltage and 500mA continuous collector current. Download the MMBTA43 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHuixinOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO200VBreakdown voltage
Ic500mACollector current
Pd350mWPower dissipation
DC Current Gain40hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat500mV@20mA,2mASaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
DN350T05-7 NPN SOT-23 350V 500mA 300mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 300mW
SMMBTA42LT1G NPN SOT-23 300V 500mA 225mW
SMMBTA42LT3G NPN SOT-23 300V 500mA 225mW
MMBTA42-7-F NPN SOT-23 300V 500mA 300mW
S-MMBTA42LT1G NPN SOT-23 300V 500mA 350mW
MMBTA42 NPN SOT-23 300V 500mA 350mW
FMMT497TA NPN SOT-23 300V 500mA 500mW
LMBTA42LT1G NPN SOT-23 300V 500mA 225mW