MMBTA42 Transistor Datasheet & Specifications

NPN SOT-23 General Purpose BORN
VCEO
300V
Ic Max
200mA
Pd Max
350mW
hFE Gain
200

Quick Reference

The MMBTA42 is a NPN bipolar transistor in a SOT-23 package by BORN. This datasheet provides complete specifications including 300V breakdown voltage and 200mA continuous collector current. Download the MMBTA42 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerBORNOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO300VBreakdown voltage
Ic200mACollector current
Pd350mWPower dissipation
DC Current Gain200hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current250nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
DN350T05-7 NPN SOT-23 350V 500mA 300mW
FMMT458TA NPN SOT-23 400V 225mA 500mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 300mW
MMBTA42 NPN SOT-23 300V 300mA 350mW
SMMBTA42LT1G NPN SOT-23 300V 500mA 225mW
SMMBTA42LT3G NPN SOT-23 300V 500mA 225mW
MMBTA42-7-F NPN SOT-23 300V 500mA 300mW
S-MMBTA42LT1G NPN SOT-23 300V 500mA 350mW
MMBTA42 NPN SOT-23 300V 500mA 350mW
MMBTA44 NPN SOT-23 400V 200mA 350mW