MMBTA13-TP Transistor Datasheet & Specifications

NPN SOT-23 General Purpose MCC
VCEO
30V
Ic Max
300mA
Pd Max
225mW
hFE Gain
10000

Quick Reference

The MMBTA13-TP is a NPN bipolar transistor in a SOT-23 package by MCC. This datasheet provides complete specifications including 30V breakdown voltage and 300mA continuous collector current. Download the MMBTA13-TP datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMCCOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic300mACollector current
Pd225mWPower dissipation
DC Current Gain10000hFE / Beta
Frequency125MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒ@(Tj)Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT491ATA NPN SOT-23 40V 1A 500mW
BC817-16LT1G NPN SOT-23 45V 500mA 225mW
BC817-40LT1G NPN SOT-23 45V 500mA 225mW
DN350T05-7 NPN SOT-23 350V 500mA 300mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
ZXTN2040FTA NPN SOT-23 40V 1A 310mW
FMMT415TD NPN SOT-23 100V 500mA 500mW