MMBTA05 Transistor Datasheet & Specifications

NPN SOT-23 General Purpose HXY MOSFET
VCEO
60V
Ic Max
500mA
Pd Max
300mW
hFE Gain
400

Quick Reference

The MMBTA05 is a NPN bipolar transistor in a SOT-23 package by HXY MOSFET. This datasheet provides complete specifications including 60V breakdown voltage and 500mA continuous collector current. Download the MMBTA05 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic500mACollector current
Pd300mWPower dissipation
DC Current Gain400hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat250mVSaturation voltage
Vebo4VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
DN350T05-7 NPN SOT-23 350V 500mA 300mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
FMMT415TD NPN SOT-23 100V 500mA 500mW
FMMT493ATA NPN SOT-23 60V 1A 500mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT5551 NPN SOT-23 160V 600mA 300mW