MMBTA05-7-F Transistor Datasheet & Specifications

NPN SOT-23 General Purpose DIODES
VCEO
60V
Ic Max
500mA
Pd Max
310mW
hFE Gain
100

Quick Reference

The MMBTA05-7-F is a NPN bipolar transistor in a SOT-23 package by DIODES. This datasheet provides complete specifications including 60V breakdown voltage and 500mA continuous collector current. Download the MMBTA05-7-F datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic500mACollector current
Pd310mWPower dissipation
DC Current Gain100hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
DN350T05-7 NPN SOT-23 350V 500mA 300mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
FMMT415TD NPN SOT-23 100V 500mA 500mW
FMMT493ATA NPN SOT-23 60V 1A 500mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT5551 NPN SOT-23 160V 600mA 300mW