MMBT9014C Transistor Datasheet & Specifications

NPN TO-236 General Purpose ST(Semtech)
VCEO
45V
Ic Max
100mA
Pd Max
200mW
hFE Gain
200

Quick Reference

The MMBT9014C is a NPN bipolar transistor in a TO-236 package by ST(Semtech). This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the MMBT9014C datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerST(Semtech)Original Manufacturer
PackageTO-236Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO45VBreakdown voltage
Ic100mACollector current
Pd200mWPower dissipation
DC Current Gain200hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat250mVSaturation voltage
Vebo3VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2SC3325-Y(TE85L,F) NPN TO-236 50V 500mA 200mW
MMBT6517BEC NPN TO-236 350V 500mA 200mW
MMBT5551 NPN TO-236 160V 600mA 350mW