MMBT5551 Transistor Datasheet & Specifications

NPN TO-236 General Purpose ST(Semtech)
VCEO
160V
Ic Max
600mA
Pd Max
350mW
hFE Gain
80
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Quick Reference

The MMBT5551 is a NPN bipolar transistor in a TO-236 package by ST(Semtech). This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the MMBT5551 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerST(Semtech)Original Manufacturer
PackageTO-236Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO160VBreakdown voltage
Ic600mACollector current
Pd350mWPower dissipation
DC Current Gain80hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all TO-236 NPN Transistors ›