2SC3325-Y(TE85L,F) Transistor Datasheet & Specifications
NPN
TO-236
General Purpose
TOSHIBA
VCEO
50V
Ic Max
500mA
Pd Max
200mW
hFE Gain
25
Quick Reference
The 2SC3325-Y(TE85L,F) is a NPN bipolar transistor in a TO-236 package by TOSHIBA. This datasheet provides complete specifications including 50V breakdown voltage and 500mA continuous collector current. Download the 2SC3325-Y(TE85L,F) datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | TO-236 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 25 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | 250mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMBT6517BEC | NPN | TO-236 | 350V | 500mA | 200mW |
| MMBT5551 | NPN | TO-236 | 160V | 600mA | 350mW |