MMBT6517BEC Transistor Datasheet & Specifications
NPN
TO-236
General Purpose
EIC
VCEO
350V
Ic Max
500mA
Pd Max
200mW
hFE Gain
200
Quick Reference
The MMBT6517BEC is a NPN bipolar transistor in a TO-236 package by EIC. This datasheet provides complete specifications including 350V breakdown voltage and 500mA continuous collector current. Download the MMBT6517BEC datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | EIC | Original Manufacturer |
| Package | TO-236 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 350V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 200MHz | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | - | Operating temp |