MMBT9013G Transistor Datasheet & Specifications
NPN
TO-236
General Purpose
ST(Semtech)
VCEO
30V
Ic Max
500mA
Pd Max
200mW
hFE Gain
100
Quick Reference
The MMBT9013G is a NPN bipolar transistor in a TO-236 package by ST(Semtech). This datasheet provides complete specifications including 30V breakdown voltage and 500mA continuous collector current. Download the MMBT9013G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST(Semtech) | Original Manufacturer |
| Package | TO-236 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 30V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 600mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SC3325-Y(TE85L,F) | NPN | TO-236 | 50V | 500mA | 200mW |
| MMBT6517BEC | NPN | TO-236 | 350V | 500mA | 200mW |
| MMBT5551 | NPN | TO-236 | 160V | 600mA | 350mW |